회사 블로그 Recycle Infineon Gate Driver:Half-Bridge/Level-Shift/Isolated/Three-Phase Gate Driver

Recycle Infineon Gate Driver:Half-Bridge/Level-Shift/Isolated/Three-Phase Gate Driver

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The Infineon EiceDRIVER™ gate driver IC series, based on core technologies such as SOI (Silicon-on-Insulator), JI-junction isolation and core-less transformer (CT) isolation, covers three major product architectures: level-shifting half-bridge, isolated single/ dual-channel, and integrated three-phase driver architectures. Capable of driving silicon MOSFETs, IGBTs, as well as SiC MOSFETs and GaN HEMTs—wide-bandgap power devices—these solutions are suitable for power conversion applications such as industrial power supplies, motor drives, new energy systems, automotive power conversion, and energy storage inverters, providing reliable gate drive, timing management and fault protection for power switches.

I. Level-Shifting Gate Drivers (SOI / JI Processes)
Level-shifting drivers are high-voltage non-isolated solutions that rely on on-chip high-voltage level-shifting circuits to boost low-voltage control signals to the potential of the high-side floating power transistor. They are categorised into two major process routes: SOI (Silicon-on-Insulator) and traditional JI (Junction Isolation) processes, with voltage ranges spanning 500 V to 700 V. These represent the mainstream, low-cost solutions for household appliances and general-purpose motors.

Key Features
1. The SOI process offers excellent immunity to negative voltage transients, eliminating parasitic latch-up effects and reducing level-shifting power consumption;
2. An integrated bootstrap diode (BSD) simplifies the bootstrap peripheral circuitry and reduces the number of external components;
3. Low quiescent current and built-in dead-zone interlock prevent short-circuiting between the upper and lower switches;
4. Standard pins and packages, including common packages such as DSO-8, facilitate rapid PCB integration.

Typical Products
2ED218x series (2.5A high-current half-bridge SOI driver), 2ED210x series (0.7A low-current half-bridge SOI driver).

Applications
Domestic air conditioning, induction hobs, BLDC motors for fans and pumps, small industrial inverters, and low-voltage power converters.

I. Half-Bridge Gate Drivers (Integrated High-Side + Low-Side Channels)
Half-bridge gate drivers integrate a set of high-side and low-side drive channels within a single chip, natively supporting the half-bridge power topology. They are divided into two main categories: level-shifting non-isolated half-bridges and isolated half-bridges. These drivers ensure coordinated drive timing for the upper and lower switches and incorporate built-in interlock protection to mitigate the risk of short-circuiting.

Key Features
- Dual independent drive outputs with configurable drive current to meet the gate charge requirements of different power devices;
- Built-in dead-time and under-voltage lockout (UVLO); some models integrate overcurrent and short-circuit detection;
- SOI versions offer strong resistance to negative spikes; isolated half-bridge versions achieve electrical isolation between high- and low-voltage domains via a core-less CT transformer;
- Supports unipolar and bipolar gate power supplies, suitable for high-frequency switching with IGBTs and SiC MOSFETs.

Application Scenarios
DC-DC converters, LLC resonant power supplies, auxiliary power supplies for charging points, and small half-bridge inverters.

III. Isolated Gate Drivers (CT Core-less Transformer Technology)
Infineon’s isolated gate drivers utilise an on-chip core-less transformer (CT) to achieve electrical isolation between the primary and secondary sides. They offer functional, basic and reinforced isolation levels, ensuring complete isolation between the signal and power domains and preventing high-voltage-side noise crosstalk. These drivers meet high-voltage safety standards and functional safety requirements, supporting the driving of power devices up to 1200 V.

Key Features
1. On-chip integrated isolated signal transmission with low propagation delay and high channel delay matching, supporting high-frequency switching;
2. Integrated active Miller clamping, soft shutdown, short-circuit protection and desaturation detection to suppress false turn-on caused by the Miller effect;
3. Wide operating temperature range; the automotive-grade version supports AEC-Q100 certification and meets ISO 26262 functional safety design requirements;
4. Strong Common-Mode Transient Immunity (CMTI) capability, suitable for high-voltage, high-power applications in harsh EMC environments.

Typical Products
1ED Series Isolated Gate Drivers (e.g. 1ED3321MC12N).

Application Scenarios
Automotive main inverters, on-board chargers (OBCs), energy storage converters, photovoltaic inverters, and industrial high-power IGBT module drivers.

IV. Three-Phase Gate Drivers (Integrated with Three Half-Bridge Circuits, Six Channels)
The three-phase gate driver integrates three independent half-bridge circuits onto a single chip, providing a total of six drive channels to directly drive a complete three-phase inverter bridge. It is similarly available in SOI level-shifting non-isolated three-phase and automotive-grade isolated three-phase solutions, significantly simplifying the BOM and PCB layout for three-phase motor inverters.

Key Features
- Six integrated drive channels with unified timing control, featuring built-in channel interlocking and under-voltage protection;
- The SOI process version offers excellent noise immunity and high system robustness;
- Available in industrial-grade and AEC-Q100 automotive-grade versions to meet functional safety requirements;
- Capable of directly driving three-phase BLDC and PMSM motors, reducing the need for external discrete driver components.

Application Scenarios
Industrial servos, robotic joint motors, HVAC compressors, variable-frequency motors in household appliances, and automotive traction assist motors.