회사 블로그 Recycle ST GaN Product:GaN Driver,GaN Converter,GaN Motor Driver,GaN Transistor,Smart GaNs

Recycle ST GaN Product:GaN Driver,GaN Converter,GaN Motor Driver,GaN Transistor,Smart GaNs

Shenzhen Mingjiada Electronics Co., Ltd. is a long-established global recycler of electronic components. We purchase all types of electronic products at competitive prices and provide professional recycling services to help customers clear excess stock, save storage space and reduce warehousing and management costs.

[Key Advantages of Our Recycling Service]

Highly Competitive Prices: Industry-leading valuations

Leveraging our global component distribution channels and benchmarking against original manufacturers’ spot market prices, we offer purchase prices that exceed standard market buy-back quotes. We set separate prices for bulk stock and individual samples; for large consignments, we can provide on-site inspection and quotation services.

Flexible Settlement: Multiple Payment Methods

Cash on delivery, corporate bank transfers and same-day settlement; payment for small-batch orders is made upon confirmation of courier delivery; for large-volume orders, on-site inspection and immediate settlement are available, shortening the company’s cash recovery cycle.

Global Recycling: Multi-regional Collection Points

With our Shenzhen headquarters serving as the main hub, we have established partnerships with recycling warehouses in Hong Kong, Japan, South Korea, Europe and the United States. Both domestic and international stock can be returned by post. We support compliant customs clearance for imported surplus materials and only accept genuine OEM components sourced from legitimate channels (distributors, end manufacturers or authorised distributors). Compliant transactions can be formally established through a recycling contract.

[Recycling Process]

Suppliers prepare an inventory list: model number, quantity, packaging condition, production date, and material status (brand new/disassembled/sample);

Send the material details and photographs of the items to our valuation specialists;

A professional quotation is provided within one hour; once the price is confirmed, arrange dispatch or collection;

Payment is made immediately upon successful inspection, and the transaction is completed.

I. GaN Transistors: Core Components for High-Performance Power Conversion

GaN transistors are the foundational core components of ST’s entire GaN product portfolio. Belonging to the STPOWER product family, they utilise an enhanced p-GaN HEMT (High Electron Mobility Transistor) process. These bare-die discrete devices are specifically engineered for high-voltage, high-frequency and high-efficiency power conversion applications, providing core power support for various integrated GaN products.

This product series boasts outstanding core characteristics; utilising advanced manufacturing processes, it achieves extremely low on-resistance (RDS(on)) and ultra-low gate charge (QG), with an industry-leading RDS(on) × QG quality factor that significantly reduces on-resistance and switching losses. It also features zero reverse recovery loss, completely eliminating the switching losses and electromagnetic interference associated with silicon MOSFETs’ reverse recovery, whilst supporting stable operation at MHz-level high frequencies, thereby effectively reducing the size of passive components such as transformers, capacitors and inductors in power supply systems. The product range covers high-voltage ratings from 600 V to 650 V, making it suitable for industrial high-voltage applications. Furthermore, the lead-free package design offers enhanced resistance to vibration and thermal fatigue, along with excellent thermal dissipation efficiency, significantly improving long-term operational reliability.

ST’s GaN transistors are primarily suited for applications such as high-frequency switching power supplies, photovoltaic micro-inverters, energy storage converters and industrial high-voltage rectifier equipment. They can be used to build discrete power circuits independently or integrated as core power chips within ST’s various driver, converter and smart GaN devices, serving as the cornerstone of wide-bandgap power circuits.

II. GaN Drivers: Dedicated driver chips precisely tailored to GaN devices

ST’s GaN drivers are dedicated gate driver chips customised for the characteristics of GaN transistors. They comprise two core product lines: the STDRIVE high-voltage half-bridge driver series and the STGAP isolated driver series. These perfectly match the switching logic of enhancement-mode GaN FETs, addressing the industry challenge that standard silicon-based driver chips cannot accommodate the high-frequency, high-speed switching characteristics of GaN. They are the key supporting chips for ensuring the stable and efficient operation of GaN devices.

The products’ core strengths lie in high-speed driving and high reliability. They support a standard 5V drive voltage specifically for GaN, and are equipped with precise dV/dt control technology, enabling accurate regulation of GaN device switching speeds. This not only minimises switching losses but also effectively suppresses EMI caused by high-frequency switching, thereby simplifying EMC compliance design for equipment. Certain models integrate features such as a bootstrap diode, intelligent overcurrent shutdown protection and under-voltage lock-out (UVLO), eliminating the need for external auxiliary circuits and significantly streamlining hardware design. They also feature ultra-fast high-side turn-on speeds and precise timing control capabilities, making them suitable for high-frequency continuous switching conditions. Some automotive-grade models comply with the ISO 26262 ASIL B safety standard, making them suitable for demanding automotive applications.

ST’s GaN drivers are widely used in various GaN power conversion circuits, high-frequency inverters, miniaturised power supplies, electric mobility devices and robotic power systems. They provide stable and precise drive control for discrete GaN transistor circuits, fully unlocking the performance potential of GaN devices.

III. GaN Converters: Highly Integrated, Off-Line High-Efficiency Power Supply Solutions

ST’s GaN converters are highly integrated, all-in-one off-line power conversion devices. At their core, they integrate a high-voltage GaN power transistor and a quasi-resonant PWM control chip onto a single chip, housed in a compact QFN package. Requiring no complex peripheral circuitry, they represent a standardised, high-efficiency solution for small-to-medium power supply applications, characterised by miniaturisation, low power consumption and ease of mass production.

The flagship VIPerGaN series covers the full power range of 50W, 65W and 100W. Equipped with 700V high-voltage GaN devices and utilising a quasi-resonant operating mode, these products achieve ultra-high conversion efficiency across the entire load range, with particularly notable energy efficiency advantages under light-load conditions, easily meeting stringent global energy-saving standards such as Tier 6. The devices incorporate comprehensive over-voltage, over-current, over-temperature and short-circuit protection functions, ensuring exceptional operational stability. Furthermore, they support high-frequency operation, enabling a significant reduction in the size and weight of power adaptors and switching power supplies, and facilitating lightweight designs without the need for heat sinks.

This product series is primarily used in small-to-medium power offline power supply applications, such as fast-charging adapters for consumer electronics, auxiliary power supplies for household appliances, industrial low-voltage power supplies, LED driver power supplies, and power supply systems for IoT devices, significantly lowering the barriers to power supply R&D and mass production.

IV. GaN Motor Drivers: A New Generation of High-Efficiency Devices Dedicated to Motion Control

Centred on the GaNSPIN series, ST’s GaN motor drivers are system-in-package (SiP) devices customised for motion control applications. They innovatively integrate a 650V high-voltage GaN half-bridge power unit, a high-voltage gate driver and protection circuits. As core products enabled by wide-bandgap technology for motor control, they completely revolutionise the drawbacks of traditional silicon-based motor drive solutions, such as large size, high heat generation and low energy efficiency.

Compared to traditional motor driver chips, the GaNSPIN series leverages the high-frequency, low-loss characteristics of GaN devices to precisely control motor switching sequences, effectively reducing operational stress on the motor whilst minimising heat generation and noise. At the same time, it significantly optimises system EMI performance, simplifying the EMC design of the entire unit. The products operate stably without the need for external heat sinks, significantly simplifying the structure of motor drive modules and making them suitable for compact equipment designs. They also feature comprehensive overcurrent, undervoltage and overheat protection mechanisms, ensuring high operational reliability. They support precise speed regulation and steady-state control, making them suitable for a wide range of medium- and low-voltage motor drive applications.

Core applications span smart home white goods, industrial fans, water pumps, compressors, power tools, factory automation servo drives and motion control for small robots, helping motorised equipment achieve upgrades in energy efficiency, miniaturisation and quiet operation.

V. Smart GaN Devices: Highly Integrated System-Level Power Solutions

ST’s smart GaN devices, centred on the MASTERGAN series and the STi2GaN technology platform, represent the high-end, highly integrated outcome of ST’s GaN technology. As system-level power packaging products, they break through the design limitations of traditional discrete components by integrating GaN power transistors, dedicated driver circuits, logic control units and comprehensive protection modules into a single, wire-bond-free package, constituting a truly ‘plug-and-play’ smart power system.

The MASTERGAN series utilises a half-bridge architecture at its core, integrating two 650V/600V high-voltage GaN HEMTs with a dedicated driver chip. It features low on-resistance and extremely high power density, whilst incorporating a full suite of functions including an integrated bootstrap diode, under-voltage lockout for both upper and lower switches, overcurrent protection and intelligent shutdown. As no redundant external circuitry is required, this significantly shortens the R&D cycle. Leveraging the innovative STi2GaN architecture, the products eliminate the need for traditional wire bonding processes, resulting in significantly enhanced thermal performance, immunity to interference and structural stability. They are capable of withstanding harsh operating conditions involving high frequencies, high voltages and high temperatures over the long term. At the same time, they support flexible topology configurations, adapting to a wide range of power system architectures whilst combining high performance with high compatibility.

Intelligent GaN devices are positioned for mid- to high-end, high-efficiency power applications and are widely used in fields with extremely high demands for power density, energy efficiency and reliability, such as high-density industrial power supplies, new energy vehicle power supplies, high-end servo drives, energy storage systems, high-frequency inverters and precision medical power supplies. They represent the preferred core solution for next-generation power electronic systems.