회사 블로그 [Supply] Infineon Silicon Carbide MOSFET_IMZA120R014M1H_CoolSiC™ 1200 V, 14 mΩ SiC Trench MOSFET

Shenzhen Mingjiada Electronics Co., Ltd. offers immediate availability of Infineon's CoolSiC™ 1200 V, 14 mΩ SiC trench MOSFET, the IMZA120R014M1H, in a TO247-4 package.

IMZA120R014M1H Product Description
The IMZA120R014M1H is an Infineon Technologies CoolSiC™ 1200 V SiC MOSFET utilising advanced trench semiconductor technology, delivering an optimal balance of performance and reliability. Housed in a TO247-4 package, this IMZA120R014M1H SiC MOSFET incorporates design considerations to minimise parasitic source inductance effects, thereby enabling faster switching speeds and enhanced system efficiency.

Compared to conventional silicon-based switching devices such as IGBTs and MOSFETs, the IMZA120R014M1H CoolSiC™ MOSFET offers a range of significant advantages: It possesses the lowest gate charge and device capacitance levels among 1200 V switching devices, features a body diode with zero reverse recovery loss, exhibits switching losses that are virtually unaffected by temperature, and offers turn-on characteristics without a knee voltage. These features make the IMZA120R014M1H highly suitable for hard-switching and resonant switching topologies.

The IMZA120R014M1H incorporates XT diffusion bonding technology for superior thermal performance, while its robust, low-loss body diode is particularly well-suited for demanding hard-switching applications.

Specifications
Key technical parameters for the IMZA120R014M1H are as follows:
FET Type: N-channel
Technology: SiC FET (Silicon Carbide)
Drain-Source Voltage (Vdss): 1200 V
Continuous Drain Current (Id): 127 A (Tc)
Drive Voltage: 15 V, 18 V (Maximum Rds On, Minimum Rds On)
On-Resistance (Maximum): 18.4 mΩ @ 54.3 A, 18 V
Gate threshold voltage (Vgs(th)): 5.2 V @ 23.4 mA
Gate charge (Qg): 145 nC @ 18 V
Gate voltage (Vgs): +20 V, -5 V
Input capacitance (Ciss): 4580 pF @ 25 V
Power Dissipation (Max): 455 W (Tc)
Operating Temperature: -55°C to 175°C (TJ)
Mounting Type: Through-Hole
Package/Case: PG-TO247-4-8

These outstanding parameters demonstrate that the IMZA120R014M1H delivers exceptional performance and stability across diverse high-voltage, high-power applications.

Features Of IMZA120R014M1H
VDSS = 1200 V at Tvj = 25°C
IDDC = 127 A at TC = 25°C
RDS(on) = 14 mΩ at VGS = 18 V, Tvj = 25°C
Extremely low switching losses
Short-circuit withstand time: 3 µs
Reference gate threshold voltage, VGS(th) = 4.2 V
Resistant to parasitic conduction, enabling 0 V gate voltage shutdown
Robust body diode suitable for hard switching
Infineon XT interconnect technology delivers industry-leading thermal performance

Typical Applications
The IMZA120R014M1H CoolSiC™ MOSFET is ideally suited for diverse high-performance power electronics applications, including but not limited to:
Electric vehicle charging stations: Delivering efficient, rapid power conversion
Industrial UPS/online UPS: Ensuring continuous and stable power supply
Solar optimisers and universal drivers: Enhancing solar power generation system efficiency
Power factor correction (PFC) circuits: Improving grid quality
Bidirectional topologies and DC-DC converters: Enabling bidirectional energy flow and DC voltage conversion
DC-AC inverters: Converting direct current to alternating current

The IMZA120R014M1H excels in these applications primarily due to its outstanding switching characteristics and low conduction losses. It significantly enhances system efficiency and power density while reducing system complexity and cooling requirements.

Contact Information
Should you be interested in the Infineon IMZA120R014M1H CoolSiC™ 1200 V SiC trench MOSFET, please do not hesitate to contact Mingjiada Electronics.

Contact: Mr. Chen
Telephone: +86 13410018555
Email: sales@hkmjd.com
Website: www.integrated-ic.com