회사 블로그 Supply ST Power Transistors:IGBT,Power Bipolar,Power MOSFET,PowerGaN,SiC MOSFET

Supply ST Power Transistors:IGBT,Power Bipolar,Power MOSFET,PowerGaN,SiC MOSFET

As a renowned distributor of electronic components, Shenzhen Mingjiada Electronics Co., Ltd. possesses core strengths including global channels for sourcing genuine products, a stock of over 2 million SKUs, rapid delivery capabilities, and comprehensive technical and supply chain services. We are able to efficiently resolve component procurement challenges during both the R&D and mass production phases.

【Inventory and Delivery Advantages】

Extensive Inventory: We maintain over 2 million SKUs in stock, covering general-purpose, niche, scarce, automotive-grade and industrial-grade components, thereby completely eliminating procurement headaches.

Rapid Response and Delivery: Standard orders dispatched within 1–3 days; domestic urgent orders dispatched within 4 hours/responded to within 24 hours; dual warehouses in Hong Kong and Shenzhen ensure efficient logistics operations.

Flexible Procurement Solutions: Support for sample requests, small-batch trials and bulk purchases, covering the entire lifecycle from R&D to mass production.

I. IGBT (Insulated Gate Bipolar Transistor)

Core Positioning

The preferred choice for high-voltage, high-current applications, combining the voltage control of MOSFETs with the low on-state voltage drop of bipolar transistors, making them the mainstream power devices for industrial and new energy sectors.

Key Characteristics

Voltage Range: 300V–1700V (mainstream: 600V/650V/1200V)

Conduction Loss: Low VCE (SAT) (saturation voltage drop), significantly reducing conduction loss

Switching Characteristics: Optimised turn-off energy, suppressing power dissipation caused by temperature rise

Drive Method: Voltage-controlled (simple gate drive), no high base current required

Package: TO-247, TO-3P, modules (ACEPACK, SLLIMM IPM)

Typical Product Series

V Series (600V): 50–100kHz, suitable for welding and PFC

HB/HB2 Series (650V): 16–60kHz, suitable for solar, UPS, charging stations

M/MH Series (650V/750V): 2–20kHz, suitable for motor control, automotive traction

Application Scenarios

Industrial: Inverters, UPS, welding, induction heating

New Energy: PV inverters, energy storage converters, charging stations

Automotive: Traction inverters, OBC (on-board chargers)

II. Power Bipolar Junction Transistors (BJTs)

Core Positioning

Classic current-driven devices, featuring mature technology and low cost, suitable for low-voltage/medium-voltage, low-speed, and high-voltage-withstand applications.

Key Characteristics

Voltage range: 15V–1700V (including Darlington configurations)

Drive Method: Current-driven (requires continuous base current)

Conduction Characteristics: Low saturation voltage, low power dissipation at high currents

Limitations: Slow switching speed (<50 kHz), high drive losses; gradually being replaced by MOSFETs/IGBTs

Typical Products

Darlington transistors: High current gain (β > 1000), suitable for high-current amplification

High-voltage BJTs: 1200V/1700V, suitable for linear power supplies and audio power amplifiers

Application Scenarios

Legacy linear power supplies, audio power amplification

Low-voltage motor drives, industrial control (low-speed)

III. Power MOSFETs (Silicon-based)

Core Positioning

The king of medium- and low-voltage high-frequency applications; voltage-driven, extremely fast switching speed, low losses; the mainstream switching device for consumer electronics and new energy.

Key Characteristics

Voltage range: -100V to 1700V (low voltage: -100V to 120V; high voltage: 250V to 1700V)

Core Advantages:

Low gate charge (Qg), low on-resistance (Rds(on))

Switching frequency: 100kHz to 10MHz

Voltage-driven, simple drive circuitry, extremely low losses

Technologies: MDmesh, StripFET, DMOS, Planar

Typical Product Series

Low-voltage (-100V to 120V): STP series (e.g. STP80NF70), STL series

High-voltage (250V to 1700V): MDmesh M6/M7, STW series

Application Scenarios

Consumer Electronics: Mobile phone fast charging, laptop power supplies, adapters

Industrial: Switching power supplies (SMPS), LED drivers, motor control

Automotive: OBC, DC-DC, body control

IV. Power GaN (Gallium Nitride)

Core Positioning

Ultra-high frequency, high efficiency, high power density; representative of third-generation semiconductors; targeted at high-frequency fast charging, data centres and new energy.

Key Features

Voltage range: 100V–650V (mainstream 650V)

Core Advantages:

Switching frequency of 1MHz+, significantly reducing the size of inductors and capacitors

Extremely low on-resistance and switching losses

Power density increased by 30%+, resulting in a smaller system footprint

Technology: GaN-on-Si (Gallium Nitride on Silicon), Enhancement-mode HEMT

Typical Products

650V GaN: STGaN series (e.g. STGAP2HS)

100V GaN: Suitable for low-voltage, high-frequency applications and fast charging

Application Scenarios

Consumer Electronics: 65W–300W fast charging, GaN chargers

Data Centres: Server power supplies, 48V DC-DC converters

New Energy: On-board chargers (OBC), high-frequency inverters

V. SiC MOSFET (Silicon Carbide)

Core Positioning

High voltage, high temperature, ultra-high efficiency; the benchmark for third-generation semiconductors, targeting new energy vehicles, industrial high-voltage applications and photovoltaic energy storage.

Key Characteristics

Voltage range: 650V–2200V (mainstream: 650V/1200V/1700V)

Core Advantages:

High-temperature resistance (Tj=200°C), low thermal management requirements

Switching frequency 100kHz–1MHz, 50%+ lower losses than silicon IGBTs

Extremely low on-resistance, minimal losses under high-voltage, high-current conditions

High thermal conductivity (3 times that of silicon), enabling more compact thermal management systems

Packages: TO-247, HiP247, H2PAK-7, STPAK

Typical Product Series

G3 Series (650V/1200V): Industrial/Automotive grade, low loss, high reliability

1700V/2200V: Suitable for high-voltage energy storage and photovoltaic inverters

Application Scenarios

New Energy Vehicles: Traction inverters, OBC, high-voltage DC-DC

Industrial: Photovoltaic inverters, energy storage converters, charging stations

Power Grid: High-voltage UPS, power quality management